Invention Grant
- Patent Title: Semiconductor device and method
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Application No.: US17160848Application Date: 2021-01-28
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Publication No.: US11430790B2Publication Date: 2022-08-30
- Inventor: Shahaji B. More
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/06 ; H01L29/78 ; H01L21/8234 ; H01L29/66

Abstract:
An embodiment device includes: an isolation region on a substrate; a first fin extending above a top surface of the isolation region; a gate structure on the first fin; and an epitaxial source/drain region adjacent the gate structure, the epitaxial source/drain region having a first main portion and a first projecting portion, the first main portion disposed in the first fin, the first projecting portion disposed on a first sidewall of the first fin and beneath the top surface of the isolation region.
Information query
IPC分类: