A metal wiring film, a method for fabricating the same, and a thin film transistor. The metal wiring film includes: a first film layer formed by a nickel-copper alloy, a mass percentage of nickel in the nickel-copper alloy ranges from 30% to 70%; a second film layer disposed above the first film layer, a material forming the second film layer is an aluminum-neodymium alloy, and the mass percentage of neodymium in the aluminum-neodymium alloy ranges from 1% to 5%; a third film layer disposed above the second film layer, a material forming the third film layer is the same as the material forming the first film layer.