Invention Grant
- Patent Title: Channel mobility improvement
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Application No.: US16943751Application Date: 2020-07-30
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Publication No.: US11430867B2Publication Date: 2022-08-30
- Inventor: Pei-Wei Lee , Yasutoshi Okuno , Pang-Yen Tsai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/04 ; H01L29/66 ; H01L21/66 ; H01L29/78
Abstract:
A semiconductor device according to the present disclosure includes a substrate including a plurality of atomic steps that propagate along a first direction, and a transistor disposed on the substrate. The transistor includes a channel member extending a second direction perpendicular to the first direction, and a gate structure wrapping around the channel member.
Public/Granted literature
- US20210234002A1 Channel Mobility Improvement Public/Granted day:2021-07-29
Information query
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