A semiconductor device includes a semiconductor substrate, a first current-carrying electrode, a second current-carrying electrode, a first control electrode disposed between the first current-carrying electrode and the second current-carrying electrode, a third current-carrying electrode electrically coupled to the first current-carrying electrode, and a fourth current-carrying electrode adjacent the third current-carrying electrode. The third current-carrying electrode and the fourth current-carrying electrode are configured to support current flow from the third current-carrying electrode to the fourth current-carrying electrode parallel to a second direction. The fourth current-carrying element is electrically coupled to the second current-carrying electrode and a second control electrode. The second control electrode is electrically coupled to the first control electrode. A first crossing region is electrically coupled to the first control electrode and a second crossing region is electrically coupled to the fourth current-carrying electrode, wherein the second crossing region crosses a portion of the first crossing region.