Invention Grant
- Patent Title: Gallium nitride high-electron mobility transistors with p-type layers and process for making the same
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Application No.: US15192545Application Date: 2016-06-24
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Publication No.: US11430882B2Publication Date: 2022-08-30
- Inventor: Saptharishi Sriram
- Applicant: Cree Fayetteville, Inc.
- Applicant Address: US AR Fayetteville
- Assignee: Cree Fayetteville, Inc.
- Current Assignee: Cree Fayetteville, Inc.
- Current Assignee Address: US AR Fayetteville
- Agency: BakerHostetler
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/66 ; H01L21/265 ; H01L29/16 ; H01L21/322 ; H01L29/20
Abstract:
A high-electron mobility transistor includes a substrate layer, a first buffer layer provided on the substrate layer, a barrier layer provided on the first buffer layer, a source provided on the barrier layer, a drain provided on the barrier layer, and a gate provided on the barrier layer. The transistor further includes a p-type material layer having a length parallel to a surface of the substrate layer over which the first buffer layer is provided, the length of the p-type material layer being less than an entire length of the substrate layer. The p-type material layer is provided in one of the following: the substrate layer, or the first buffer layer. A process of making the high-electron mobility transistor is disclosed as well.
Public/Granted literature
- US20170373176A1 GALLIUM NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH P-TYPE LAYERS AND PROCESS FOR MAKING THE SAME Public/Granted day:2017-12-28
Information query
IPC分类:
