Invention Grant
- Patent Title: Oxygen vacancy of amorphous indium gallium zinc oxide passivation by silicon ion treatment
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Application No.: US16818963Application Date: 2020-03-13
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Publication No.: US11430898B2Publication Date: 2022-08-30
- Inventor: Jose-Ignacio Del-Agua-Borniquel , Hendrik F. W. Dekkers , Hans Van Meer , Jae Young Lee
- Applicant: APPLIED MATERIALS, INC.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Moser Taboada
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66 ; H01L21/02 ; H01L21/425 ; H01L29/24
Abstract:
Methods and apparatus for forming a thin film transistor (TFT) having a metal oxide layer. The method may include forming an amorphous metal oxide layer and treating the metal oxide layer with a silicon containing gas or plasma including Si4+ ions. The silicon treatment of the metal oxide layer helps fill the oxygen vacancies in the metal oxide channel layer, leading to a more stable TFT and preventing a negative threshold voltage in the TFT.
Public/Granted literature
- US20210288186A1 OXYGEN VACANCY OF AMORPHOUS INDIUM GALLIUM ZINC OXIDE PASSIVATION BY SILICON ION TREATMENT Public/Granted day:2021-09-16
Information query
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