Invention Grant
- Patent Title: Power amplifier with bias current generating and bias current limiting apparatus
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Application No.: US17005369Application Date: 2020-08-28
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Publication No.: US11431298B2Publication Date: 2022-08-30
- Inventor: Jong Ok Ha , Iizuka Shinichi , Kwang Du Lee , Jeong Hoon Kim , Young Wong Jang
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2020-0059887 20200519
- Main IPC: H03F1/30
- IPC: H03F1/30 ; H03F3/21

Abstract:
An apparatus that generates and limits a bias current of a power amplifier is provided. The apparatus includes a bias current circuit that generates a bias current to bias the power amplifier, and critically limit an increase in bias current, and a band gap reference circuit that provides a reference voltage or a reference current to the bias current circuit. The bias current circuit is configured to critically limit the increase in bias current, as a first bias transistor that generates the bias current is converted from a triode region to a saturation region, based on the reference voltage or the reference current.
Public/Granted literature
- US20210367562A1 POWER AMPLIFIER WITH BIAS CURRENT GENERATING AND BIAS CURRENT LIMITING APPARATUS Public/Granted day:2021-11-25
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