- Patent Title: Bias circuit and amplifying device with temperature compensation
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Application No.: US16534117Application Date: 2019-08-07
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Publication No.: US11431299B2Publication Date: 2022-08-30
- Inventor: Kyu Jin Choi , Je Hee Cho
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2019-0045558 20190418
- Main IPC: H03F1/30
- IPC: H03F1/30 ; H03F3/21

Abstract:
A bias circuit includes a current generating circuit generating an internal base current based on a reference current, a bias output circuit generating a base bias current based on the internal base current and outputting the base bias current to an amplifying circuit, and a temperature compensation circuit regulating the base bias current based on a temperature voltage reflecting a change in ambient temperature.
Public/Granted literature
- US20200336116A1 BIAS CIRCUIT AND AMPLIFYING DEVICE WITH TEMPERATURE COMPENSATION Public/Granted day:2020-10-22
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