Invention Grant
- Patent Title: Level shifting circuit and method
-
Application No.: US17384409Application Date: 2021-07-23
-
Publication No.: US11431339B1Publication Date: 2022-08-30
- Inventor: Yaqi Ma , Lei Pan , JunKui Hu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. , TSMC CHINA COMPANY, LIMITED
- Applicant Address: TW Hsinchu; CN Shanghai
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,TSMC CHINA COMPANY, LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,TSMC CHINA COMPANY, LIMITED
- Current Assignee Address: TW Hsinchu; CN Shanghai
- Agency: Hauptman Ham, LLP
- Priority: CN202110787741.9 20210713
- Main IPC: H03K19/0185
- IPC: H03K19/0185 ; H03K3/037 ; G06F30/392 ; H01L27/092

Abstract:
A circuit includes a bias circuit and a level shifter. The bias circuit includes first and second input terminals configured to receive first and second power supply voltages, and is configured to generate a bias voltage having the greater of a first voltage level of the first power supply voltage or a second voltage level of the second power supply voltage. The level shifter includes a first PMOS transistor configured to receive the first power supply voltage and a second PMOS transistor configured to receive the second power supply voltage, and each of the first and second PMOS transistors includes a bulk terminal configured to receive the bias voltage.
Information query
IPC分类: