Invention Grant
- Patent Title: System and method for manufacturing high purity silicon
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Application No.: US16759620Application Date: 2018-07-10
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Publication No.: US11434138B2Publication Date: 2022-09-06
- Inventor: Kevin Allan Dooley , Elwood A. Morris
- Applicant: NORTHERN SILICON INC
- Applicant Address: CA Vancouver
- Assignee: NORTHERN SILICON INC
- Current Assignee: NORTHERN SILICON INC
- Current Assignee Address: CA Vancouver
- International Application: PCT/CA2018/050840 WO 20180710
- International Announcement: WO2019/079879 WO 20190502
- Main IPC: C01B33/023
- IPC: C01B33/023 ; B01J3/00

Abstract:
A system and a method for producing silicon from a SiO2-containing material that includes solid SiO2. The method uses a reaction vessel including a first section and a second section in fluid communication with said first section. The method includes: heating the SiO2-containing material that includes the solid SiO2 to a SiO2-containing material that includes liquid SiO2, at a sufficient temperature to convert the solid SiO2 into the liquid SiO2; converting, in the first section, the liquid SiO2 into gaseous SiO2 that flows to the second section by reducing the pressure in the reaction vessel to a subatmospheric pressure; and reducing, in the second section, the gaseous SiO2 into liquid silicon using a reducing gas. The reducing of the pressure is performed over a continuous range of interim pressure(s) sufficient to evaporate contaminants from the SiO2-containing material, and removing by vacuum, the one or more evaporated gaseous contaminants.
Public/Granted literature
- US20200308007A1 SYSTEM AND METHOD FOR MANUFACTURING HIGH PURITY SILICON Public/Granted day:2020-10-01
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