Invention Grant
- Patent Title: High dielectric insulating silicone rubber composition and electric field relaxation layer
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Application No.: US16604345Application Date: 2018-02-20
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Publication No.: US11434345B2Publication Date: 2022-09-06
- Inventor: Kazuhiro Oishi
- Applicant: Shin-Etsu Chemical Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JPJP2017-081910 20170418
- International Application: PCT/JP2018/005950 WO 20180220
- International Announcement: WO2018/193705 WO 20181025
- Main IPC: C08K3/04
- IPC: C08K3/04 ; C08K3/36 ; C08K5/14 ; H01B3/28 ; H01B3/46

Abstract:
Provided are a high dielectric insulating silicone rubber composition and an electric field relaxation layer. This high dielectric and insulating silicone rubber comprises: (A) 100 parts by mass of an organopolysiloxane represented by formula (1), R1nSiO(4−n)/2 (1), (in the formula, R1 represents the same or different, substituted or unsubstituted monovalent hydrocarbon groups, and n is a positive number of 1.95 to 2.04); (B) 60 to 150 parts by mass of thermal black having an average primary particle size of 150 to 500 nm; (C) 5 to 100 parts by mass of reinforcing fumed silica having a specific surface area measured by a BET adsorption method of 50 m2/g or more; and (D) 0.1 to 10 parts by mass of a curing agent. The composition is characterized in that a cured product thereof satisfies a dielectric constant of 10 or more, a volume resistivity of 1.0×1013 to 1.0×1017 Ω·cm, a loss tangent of 0.1 or less, and a dielectric breakdown strength (BDV) of 7 kV/mm or more.
Public/Granted literature
- US20200157308A1 HIGH DIELECTRIC INSULATING SILICONE RUBBER COMPOSITION AND ELECTRIC FIELD RELAXATION LAYER Public/Granted day:2020-05-21
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