A substrate processing system includes a first power source configured to supply plasma having a first power level, a second power source configured to supply plasma having a second power level greater than the first power level, and a controller configured to dose a process chamber with precursor. The first power level is sufficient to enhance adsorption of the precursor on a surface of a substrate and is insufficient to decompose the precursor that is adsorbed. The controller is further configured to remove a portion of the precursor that does not adsorb onto the substrate from the process chamber while the plasma having the first power level is being supplied and activate the precursor that is adsorbed using plasma having the second power level while the plasma having the first power level is still being supplied. The second power level is sufficient to decompose the precursor that is adsorbed.