Invention Grant
- Patent Title: Enhancement of yield of functional microelectronic devices
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Application No.: US16179526Application Date: 2018-11-02
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Publication No.: US11435393B2Publication Date: 2022-09-06
- Inventor: Carlos A. Fonseca , Nathan Ip , Joel Estrella
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Slater Matsil, LLP
- Main IPC: G01R31/28
- IPC: G01R31/28 ; G01R1/02 ; G06F30/30 ; H01L21/67 ; H01L21/66 ; G06F119/18

Abstract:
Described herein are techniques related to a semiconductor fabrication process that facilitates the enhancement of systemic conformities of patterns of the fabricated semiconductor wafer. A semiconductor wafer with maximized systemic conformities of patterns will maximize the electrical properties and/or functionality of the electronic devices formed as part of the fabricated semiconductor wafer. This Abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
Public/Granted literature
- US20190137565A1 ENHANCEMENT OF YIELD OF FUNCTIONAL MICROELECTRONIC DEVICES Public/Granted day:2019-05-09
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