Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US16872805Application Date: 2020-05-12
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Publication No.: US11435645B2Publication Date: 2022-09-06
- Inventor: Tetsuya Iida , Yasutaka Nakashiba
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2019-116864 20190625
- Main IPC: G02F1/225
- IPC: G02F1/225 ; G02F1/21
Abstract:
A semiconductor device has a first semiconducting layer including an optical waveguide, a dielectric layer formed on the optical waveguide, and a conductive layer formed on the dielectric layer. A refractive index of a material of the conductive layer is smaller than a refractive index of a material of the first semiconductor layer.
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