A blankmask for EUV includes a substrate, a reflection film that is stacked on the substrate; and an absorbing film that is stacked on the reflection film. The reflection film includes at least one Mo/Si layer that includes a Mo layer and a Si layer, and at least one Ru/Si layer that includes a Ru layer and a Si layer. Interdiffusion between the respective layers forming the reflection film is suppressed in a blankmask for EUV having a reflection film. Accordingly, the reflectance of the blankmask is improved, and the decrease in reflectance due to use after the manufacturing is prevented, thereby extending the life of the photomask.