Invention Grant
- Patent Title: Physically unclonable function circuit having lower gate-to-source/drain breakdown voltage
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Application No.: US16876092Application Date: 2020-05-17
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Publication No.: US11437082B2Publication Date: 2022-09-06
- Inventor: Geeng-Chuan Chern
- Applicant: HeFeChip Corporation Limited
- Applicant Address: HK Sai Ying Pun
- Assignee: HeFeChip Corporation Limited
- Current Assignee: HeFeChip Corporation Limited
- Current Assignee Address: HK Sai Ying Pun
- Agent Winston Hsu
- Main IPC: G11C7/24
- IPC: G11C7/24 ; G11C11/419 ; H04L9/32 ; G06F21/72 ; G11C17/08 ; G11C8/20

Abstract:
A physically unclonable function (PUF) circuit includes a program control transistor, a program select transistor, a read select transistor, and a PUF bit storage transistor. The PUF bit storage transistor has a drain region coupled to the read select transistor, a source region coupled to a source line and the program select transistor, a channel region, a gate dielectric layer, and a gate electrode coupled to the program select transistor. The gate dielectric layer has a first portion formed on the drain region, a second portion formed on the source region, and a main portion formed on the channel region and between the first portion and the second portion, thicknesses of the first portion of the gate dielectric layer and the second portion of the gate dielectric layer being smaller than a thickness of the main portion of the gate dielectric layer.
Public/Granted literature
- US20210358528A1 Physically Unclonable Function Circuit Having Lower Gate-to-Source/Drain Breakdown Voltage Public/Granted day:2021-11-18
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