A semiconductor storage device includes memory strings, bit lines connected to the memory strings, respectively, sense transistors of which gates are connected to the bit lines, respectively, first transistors connected between the bit lines and the gates of the sense transistors, respectively, and a control circuit. Each of the memory strings includes first and second memory transistors adjacent to each other. The control circuit is configured to perform, during a first write sequence, a read operation with respect to the second memory transistors, a program operation with respect to the first memory transistors, and a verify operation with respect to the first memory transistors, in this order. During the verify operation, the control circuit turns on the first transistors during a first sense period, and then turns on the first transistors during a second sense period longer than the first sense period.