Invention Grant
- Patent Title: Memory system for activating redundancy memory cell and operating method thereof
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Application No.: US16875375Application Date: 2020-05-15
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Publication No.: US11437120B2Publication Date: 2022-09-06
- Inventor: Hyung-Sik Won , Hyungsup Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2017-0143429 20171031,KR10-2017-0149360 20171110
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C29/00 ; G11C29/44 ; G11C16/34 ; G11C13/00 ; G11C29/52 ; G11C16/30 ; G11C29/04
Abstract:
A memory system includes a memory device including a memory cell array including a plurality of memory cell groups, and a controller for selectively activating or inactivating one of the memory cell groups.
Public/Granted literature
- US20200279612A1 MEMORY DEVICE AND MEMORY SYSTEM Public/Granted day:2020-09-03
Information query
