Invention Grant
- Patent Title: Base substrate, functional element, and method for manufacturing base substrate
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Application No.: US16828417Application Date: 2020-03-24
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Publication No.: US11437233B2Publication Date: 2022-09-06
- Inventor: Masashi Goto , Masahiro Sakai , Shohei Oue , Takashi Yoshino
- Applicant: NGK INSULATORS, LTD.
- Applicant Address: JP Aichi
- Assignee: NGK INSULATORS, LTD.
- Current Assignee: NGK INSULATORS, LTD.
- Current Assignee Address: JP Aichi
- Agency: Flynn Thiel, P.C.
- Priority: JPJP2017-186411 20170927
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C30B29/40 ; H01L21/20

Abstract:
A base substrate includes a supporting substrate comprising aluminum oxide, and a base crystal layer provided on a main face of the supporting substrate, comprising a crystal of a nitride of a group 13 element and having a crystal growth surface. At lease one of a metal of a group 13 element and a reaction product of a material of the supporting substrate and the crystal of the nitride of the group 13 element is present between the raised part and the supporting substrate. The reaction product contains at least aluminum and a group 13 element.
Public/Granted literature
- US20200227259A1 BASE SUBSTRATE, FUNCTIONAL ELEMENT, AND METHOD FOR MANUFACTURING BASE SUBSTRATE Public/Granted day:2020-07-16
Information query
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