- Patent Title: Patterning scheme to improve EUV resist and hard mask selectivity
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Application No.: US16504646Application Date: 2019-07-08
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Publication No.: US11437238B2Publication Date: 2022-09-06
- Inventor: Nancy Fung , Chi-I Lang , Ho-yung David Hwang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/02 ; H01L21/311
Abstract:
Methods and film stacks for extreme ultraviolet (EUV) lithography are described. The film stack comprises a substrate with a hard mask, bottom layer, middle layer and photoresist. Etching of the photoresist is highly selective to the middle layer and a modification of the middle layer allows for a highly selective etch relative to the bottom layer.
Public/Granted literature
- US20200013620A1 Patterning Scheme To Improve EUV Resist And Hard Mask Selectivity Public/Granted day:2020-01-09
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