Invention Grant
- Patent Title: Transistor gate structure and method of forming
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Application No.: US17078911Application Date: 2020-10-23
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Publication No.: US11437240B2Publication Date: 2022-09-06
- Inventor: Hsin-Yi Lee , Cheng-Lung Hung , Chi On Chui
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01L29/786 ; H01L29/06 ; H01L29/423 ; H01L29/40 ; H01L21/8238 ; H01L27/092
Abstract:
A device includes a first nanostructure; a second nanostructure over the first nanostructure; a high-k gate dielectric around the first nanostructure and the second nanostructure, the high-k gate dielectric having a first portion on a top surface of the first nanostructure and a second portion on a bottom surface of the second nanostructure; and a gate electrode over the high-k gate dielectric. The gate electrode comprises: a first work function metal around the first nanostructure and the second nanostructure, the first work function metal filling a region between the first portion of the high-k gate dielectric and the second portion of the high-k gate dielectric; and a tungsten layer over the first work function metal, the tungsten layer being free of fluorine.
Information query
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