Invention Grant
- Patent Title: Etchant compositions and methods of manufacturing integrated circuit devices using the same
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Application No.: US17008736Application Date: 2020-09-01
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Publication No.: US11437246B2Publication Date: 2022-09-06
- Inventor: Youngchan Kim , Youngtak Kim , Jungah Kim , Hoon Han , Geunjoo Baek , Chisung Ihn , Sangmoon Yun
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2019-0176896 20191227
- Main IPC: H01L21/321
- IPC: H01L21/321 ; H01L21/3213 ; H01L21/306 ; H01L21/311
Abstract:
Etchant compositions described herein include etchant compositions for etching a silicon film and may include nitric acid, fluoric acid, phosphoric acid, acetic acid, a nitrogen compound, and water. The nitrogen compound may include fluorine (F), phosphorus (P), and/or carbon (C). Also described are methods of manufacturing an integrated circuit (IC) device. The methods may include providing a structure in which a silicon film doped at a first dopant concentration and an epitaxial film doped at a second dopant concentration are stacked. The second dopant concentration may be different from the first dopant concentration. The silicon film may be selectively etched from the structure by using an etchant composition.
Public/Granted literature
- US20210202264A1 ETCHANT COMPOSITIONS AND METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICES USING THE SAME Public/Granted day:2021-07-01
Information query
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