Invention Grant
- Patent Title: Heater for semiconductor manufacturing apparatus
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Application No.: US17481385Application Date: 2021-09-22
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Publication No.: US11437260B2Publication Date: 2022-09-06
- Inventor: Keita Yamana , Kazuhiro Nobori , Kengo Torii
- Applicant: NGK INSULATORS, LTD.
- Applicant Address: JP Nagoya
- Assignee: NGK INSULATORS, LTD.
- Current Assignee: NGK INSULATORS, LTD.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown, PLLC
- Priority: JPJP2018-020637 20180208
- Main IPC: H01L21/683
- IPC: H01L21/683 ; C04B35/581 ; C04B35/645 ; H01L21/67 ; H01L21/687
Abstract:
A heater for a semiconductor manufacturing apparatus, the heater includes an AlN ceramic substrate and a heating element embedded inside the AlN ceramic substrate. The AlN ceramic substrate contains O, C, Ti, Ca, and Y as impurity elements, includes an yttrium aluminate phase as a crystal phase, and has a Ti/Ca mass ratio of 0.13 or more, and a TiN phase is not detected in an XRD profile measured with Cu K-α radiation.
Public/Granted literature
- US20220005722A1 HEATER FOR SEMICONDUCTOR MANUFACTURING APPARATUS Public/Granted day:2022-01-06
Information query
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