Invention Grant
- Patent Title: Method of manufacturing semiconductor devices to increase yield in micro-transfer printing
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Application No.: US16921219Application Date: 2020-07-06
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Publication No.: US11437266B2Publication Date: 2022-09-06
- Inventor: Ralf Lerner
- Applicant: X-FAB Semiconductor Foundries GmbH
- Applicant Address: DE Erfurt
- Assignee: X-FAB Semiconductor Foundries GmbH
- Current Assignee: X-FAB Semiconductor Foundries GmbH
- Current Assignee Address: DE Erfurt
- Agency: Greenberg Traurig LLP
- Priority: DE102019118270.0 20190705
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L21/66 ; H01L25/16

Abstract:
Methods for mounting devices on a non-native substrate by a transfer stamp are disclosed. A method may include providing (102) a first semiconductor wafer (300) comprising mostly functional first devices (304) and a few non-functional first devices (302) in a first grid pattern (x, y); providing (102) a second semiconductor wafer (400) comprising second devices (402) in a second grid pattern (x′, y′); removing (108) the non-functional first devices (302) from the first semiconductor wafer (300) in respective individual first transfer printing steps; transferring (110) a plurality of the functional first devices (304) from the first semiconductor wafer (300) to the associated second devices (402) of the second semiconductor wafer (400) in a second transfer printing step; and transferring (112) individual functional first devices (304) of the first semiconductor wafer (300) to second devices not having first devices printed thereon (408) in respective individual third transfer printing steps.
Public/Granted literature
- US20210005497A1 Method of manufacturing semiconductor devices to increase yield in microtransfer printing Public/Granted day:2021-01-07
Information query
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