Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US16403596Application Date: 2019-05-05
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Publication No.: US11437272B2Publication Date: 2022-09-06
- Inventor: Mengkai Zhu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201910284956.1 20190410
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/762 ; H01L29/786 ; H01L27/12

Abstract:
A method for fabricating semiconductor device includes the steps of: providing a substrate, wherein the substrate comprises a first semiconductor layer, an insulating layer, and a second semiconductor layer; forming an active device on the substrate; forming an interlayer dielectric (ILD) layer on the substrate and the active device; forming a first contact plug in the ILD layer to electrically connect the active device; and forming a second contact plug in the ILD layer and the insulating layer after forming the first contact plug.
Public/Granted literature
- US20200328116A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2020-10-15
Information query
IPC分类: