Invention Grant
- Patent Title: Semiconductor module
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Application No.: US16882990Application Date: 2020-05-26
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Publication No.: US11437305B2Publication Date: 2022-09-06
- Inventor: Shuhei Miyachi , Takaharu Kozawa , Toshihiro Fujita
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Maschoff Brennan
- Priority: JPJP2019-101765 20190530
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/13 ; H01L23/52 ; H01L25/065 ; H01L25/18 ; H01L29/78 ; H01L29/739 ; H02M7/5387 ; H01L23/00

Abstract:
A semiconductor module includes: semiconductor devices; a resin mold that integrally seals the semiconductor devices; and external terminals that are disposed at a lateral side of the resin mold along a direction perpendicular to a thickness direction of the semiconductor devices. Each semiconductor device includes an insulated gate semiconductor device having a gate electrode, a first electrode, and a second electrode. In the insulated gate semiconductor device, carriers move from the first electrode to the second electrode through a channel provided by a voltage applied to the gate electrode. The external terminals include: a gate terminal electrically connected to the gate electrode; a first terminal electrically connected to the first electrode; and a second terminal electrically connected to the second electrode. The gate terminal and the second terminal, which are electrically connected to an identical semiconductor device, are not adjacent to each other.
Public/Granted literature
- US20200381343A1 SEMICONDUCTOR MODULE Public/Granted day:2020-12-03
Information query
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