Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17108325Application Date: 2020-12-01
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Publication No.: US11437341B2Publication Date: 2022-09-06
- Inventor: Ryuichi Oikawa
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2020-11001 20200127
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
A semiconductor device comprises two memory chips, one control chip controlling each memory chip, a signal transmission path through which a signal transmission between the control chip and each memory chip is performed, and a capacitance coupled onto the signal transmission path. Also, the capacitance (capacitor element) is larger than each parasitic capacitance parasitic on each chip. Accordingly, it is possible to perform the signal transmission of the semiconductor device at high speed.
Public/Granted literature
- US20210233886A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-07-29
Information query
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