Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17179778Application Date: 2021-02-19
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Publication No.: US11437351B2Publication Date: 2022-09-06
- Inventor: Yasuo Otsuka
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2020-151299 20200909
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L25/065 ; H01L23/00 ; H01L23/64

Abstract:
A semiconductor device includes: a wiring board including first to third bonding pads; a chip stack including semiconductor chips, each chip having first to third connection pads, the first connection pads being connected in series to each other and to the first bonding pad through first bonding wires to form a first transmission channel, the second connection pads being connected in series to each other and to the second bonding pad through second bonding wires to form a second transmission channel, and the third connection pads being connected in series to each other and to the third bonding pad through third bonding wires to form a third transmission channel; and at least one of a first and a second terminating resistor being provided above the chip stack, the first resistor being connected to the first and second channels, the second resistor being connected to the first and third channels.
Public/Granted literature
- US20220077115A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-03-10
Information query
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