Invention Grant
- Patent Title: Tunable passive semiconductor elements
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Application No.: US16643553Application Date: 2017-09-29
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Publication No.: US11437366B2Publication Date: 2022-09-06
- Inventor: Zhichao Zhang , Kemal Aygun , Yidnekachew S. Mekonnen
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt P.C.
- International Application: PCT/US2017/054564 WO 20170929
- International Announcement: WO2019/066952 WO 20190404
- Main IPC: H01L23/525
- IPC: H01L23/525 ; H01L27/06 ; H01L23/522 ; H01L25/065 ; H01L25/00 ; H01L49/02 ; H01L23/00

Abstract:
Passive semiconductor components and switches may be formed directly in, on, about, or across each of two or more semiconductor dies included in a stacked-die semiconductor package. At least some of the passive semiconductor components and/or switches may be formed in redistribution layers operably coupled to corresponding semiconductor dies included in the stacked-die semiconductor package. The switches may have multiple operating states and may be operably coupled to the passive semiconductor components such that one or more passive semiconductor components may be selectively included in one or more circuits or excluded from one or more circuits. The switches may be manually controlled or autonomously controlled using one or more control circuits. The one or more control circuits may receive one or more input signals containing host system information and/or data that is used to adjust or set the operating state of at least some of the switches.
Information query
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