Invention Grant
- Patent Title: Semiconductor device with multiple threshold voltages and method for fabricating the same
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Application No.: US17143663Application Date: 2021-01-07
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Publication No.: US11437370B2Publication Date: 2022-09-06
- Inventor: Yi-Hsien Chou
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/28 ; H01L29/423 ; H01L29/06 ; H01L29/49 ; H01L21/8234 ; H01L21/762
Abstract:
The present application discloses a semiconductor device with multiple threshold voltages and a method for fabricating the semiconductor device with the multiple threshold voltages. The semiconductor device includes a substrate, a first gate structure positioned in the substrate and having a first depth and a first threshold voltage, and a second gate structure positioned in the substrate and having a second depth and a second threshold voltage. The first depth is greater than the second depth, and the first threshold voltage is different from the second threshold voltage.
Public/Granted literature
- US20220216200A1 SEMICONDUCTOR DEVICE WITH MULTIPLE THRESHOLD VOLTAGES AND METHOD FOR FABRICATING THE SAME Public/Granted day:2022-07-07
Information query
IPC分类:
