Invention Grant
- Patent Title: Field effect transistors with negative capacitance layers
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Application No.: US16925718Application Date: 2020-07-10
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Publication No.: US11437371B2Publication Date: 2022-09-06
- Inventor: Chansyun David Yang , Chan-Lon Yang , Keh-Jeng Chang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/8234 ; H01L29/06 ; H01L29/78 ; H01L29/423 ; H01L29/51 ; H01L29/66 ; H01L21/822

Abstract:
The present disclosure describes a method includes forming a fin structure including a fin base portion and a stacked fin portion on a substrate. The stacked fin portion includes a first semiconductor layer on the fin base portion, a second semiconductor layer above the first semiconductor layer, and a sacrificial semiconductor layer between the first and second semiconductor layers. The method further includes replacing the sacrificial semiconductor layer with a negative capacitance (NC) layer and forming gate electrodes around the NC layer, the first semiconductor layer, and the second semiconductor layer. The NC layer includes an NC dielectric material.
Public/Granted literature
- US20220013652A1 FIELD EFFECT TRANSISTORS WITH NEGATIVE CAPACITANCE LAYERS Public/Granted day:2022-01-13
Information query
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