The present technology relates to a solid-state image pickup device that can suppress dark current thereby to suppress picture quality degradation. A solid-state image pickup device includes a pixel array region in which pixels each including a photoelectric conversion unit having one of a chemical semiconductor, amorphous silicon, germanium, a quantum dot photoelectric conversion film and an organic photoelectric conversion film are disposed two-dimensionally in rows and columns. The pixel array region has a voltage application pixel on an outermost circumference of the pixel array region or on the outer side with respect to an effective pixel region of the pixel array region, the voltage application pixel being one of the pixels to which a fixed voltage is normally applied. The present technology can be applied, for example, to a solid-state image pickup device and so forth.