Invention Grant
- Patent Title: Hybrid bonded structure
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Application No.: US16888862Application Date: 2020-06-01
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Publication No.: US11437422B2Publication Date: 2022-09-06
- Inventor: Bo-Tsung Tsai
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L23/52 ; H01L27/146 ; H01L23/528 ; H01L23/00 ; H01L23/522 ; H01L25/00 ; H01L23/532

Abstract:
A hybrid bonded structure including a first integrated circuit component and a second integrated circuit component is provided. The first integrated circuit component includes a first dielectric layer, first conductors and isolation structures. The first conductors and the isolation structures are embedded in the first dielectric layer. The isolation structures are electrically insulated from the first conductors and surround the first conductors. The second integrated circuit component includes a second dielectric layer and second conductors. The second conductors are embedded in the second dielectric layer. The first dielectric layer is bonded to the second dielectric layer and the first conductors are bonded to the second conductors.
Public/Granted literature
- US20200295070A1 HYBRID BONDED STRUCTURE Public/Granted day:2020-09-17
Information query
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