Invention Grant
- Patent Title: Magnetic device and magnetic random access memory
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Application No.: US17135805Application Date: 2020-12-28
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Publication No.: US11437434B2Publication Date: 2022-09-06
- Inventor: Wilman Tsai , Shy-Jay Lin , Mingyuan Song
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L27/105 ; H01L43/08 ; H01L43/10 ; H01L43/12

Abstract:
A spin-orbit-torque (SOT) magnetic device includes a bottom metal layer, a first magnetic layer disposed over the bottom metal layer, a spacer layer disposed over the first magnetic layer, and a second magnetic layer disposed over the spacer layer. A diffusion barrier layer for suppressing metal elements of the first magnetic layer from diffusing into the bottom metal layer is disposed between the bottom metal layer and the first magnetic layer.
Public/Granted literature
- US20210118952A1 MAGNETIC DEVICE AND MAGNETIC RANDOM ACCESS MEMORY Public/Granted day:2021-04-22
Information query
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