Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
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Application No.: US16845716Application Date: 2020-04-10
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Publication No.: US11437465B2Publication Date: 2022-09-06
- Inventor: Yoshinori Matsuno , Yasushi Takaki , Kensuke Taguchi , Kosuke Miyazaki
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2019-110328 20190613
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/47 ; H01L29/40 ; H01L29/16
Abstract:
A semiconductor device includes an insulating layer provided on a first impurity layer and a second impurity layer on a termination region side, a metallized layer provided on the first impurity layer and the second impurity layer exposed from the insulating layer and on the insulating layer, and an electrode provided on the metallized layer. A position of a first end of the metallized layer on the termination region side and a position of a second end of the electrode on the termination region side are the same in plan view.
Information query
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