A power semiconductor device includes: a semiconductor body; a first load terminal structure coupled to the body front side and a second load terminal structure coupled to the body backside; an active area for conducting a load current between the load terminal structures; a drift region having a first conductivity type; a backside region arranged at the backside and including, inside the active area, first and second backside emitter zones. At least one of the backside emitter zones includes: first sectors each having at least one first region of a second conductivity type, the first region arranged in contact with the second load terminal structure and having a smallest lateral extension of at most 50 μm; and/or second sectors each having a second region of the second conductivity type arranged in contact with the second load terminal structure and having a smallest lateral extension of at least 50 μm.