Invention Grant
- Patent Title: Semiconductor device and method of manufacture
-
Application No.: US17072719Application Date: 2020-10-16
-
Publication No.: US11437492B2Publication Date: 2022-09-06
- Inventor: Wan-Yi Kao , Hung Cheng Lin , Che-Hao Chang , Yung-Cheng Lu , Chi On Chui
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/06 ; H01L29/423 ; H01L29/49 ; H01L29/786 ; H01L21/02
Abstract:
Semiconductor devices and methods of manufacturing are presented in which inner spacers for nanostructures are manufactured. In embodiments a dielectric material is deposited for the inner spacer and then treated. The treatment may add material and cause an expansion in volume in order to close any seams that can interfere with subsequent processes.
Public/Granted literature
- US20210367063A1 Semiconductor Device and Method of Manufacture Public/Granted day:2021-11-25
Information query
IPC分类:
