Invention Grant
- Patent Title: Semiconductor device with graphene-based element and method for fabricating the same
-
Application No.: US16996151Application Date: 2020-08-18
-
Publication No.: US11437494B2Publication Date: 2022-09-06
- Inventor: Tse-Yao Huang
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/49 ; H01L29/51
Abstract:
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a stacked gate structure positioned on the substrate; first spacers attached on two sides of the stacked gate structure; and second spacers attached on two sides of the first spacers; wherein the first spacers comprise graphene.
Public/Granted literature
- US20220059673A1 SEMICONDUCTOR DEVICE WITH GRAPHENE-BASED ELEMENT AND METHOD FOR FABRICATING THE SAME Public/Granted day:2022-02-24
Information query
IPC分类:
