Invention Grant
- Patent Title: FinFET device and method
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Application No.: US17113351Application Date: 2020-12-07
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Publication No.: US11437498B2Publication Date: 2022-09-06
- Inventor: Chung-Shu Wu , Ying-Ya Hsu , Ching-Yu Pan , Hsiu-Hao Tsao , An Chyi Wei , Yuan-Hung Chiu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8234 ; H01L27/088 ; H01L29/66 ; H01L21/02
Abstract:
A method includes forming a fin on a substrate, forming an insulating material over the fin, recessing the insulating material to form an isolation region surrounding the fin, wherein an upper portion of the fin protrudes above the isolation region, performing a trimming process to reduce a width of the upper portion of the fin, and forming a gate structure extending over the isolation region and the upper portion of the fin.
Public/Granted literature
- US20210111272A1 FINFET DEVICE AND METHOD Public/Granted day:2021-04-15
Information query
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