A semiconductor device includes a region of semiconductor material and a trench gate structure. The trench gate structure includes an active trench, a shield dielectric layer in a lower portion of the active trench, and a shield electrode of a first polycrystalline semiconductor material adjacent to the shield dielectric layer. A gate dielectric layer is adjacent to an upper portion of the active trench and a gate electrode of a second polycrystalline semiconductor material is adjacent to the gate dielectric layer. A shield conductive layer of a first conductive material is adjacent to the shield electrode and a gate conductive layer of the first conductive material is adjacent to the gate electrode. A dielectric fill structure is in the active trench electrically isolating the gate electrode and the gate conductive layer from the shield electrode and the shield conductive layer. In some examples, the semiconductor device includes a trench shield contact structure that includes the shield conductive layer.