Invention Grant
- Patent Title: Field-effect transistors with a polycrystalline body in a shallow trench isolation region
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Application No.: US16890063Application Date: 2020-06-02
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Publication No.: US11437522B2Publication Date: 2022-09-06
- Inventor: Michel J. Abou-Khalil , Steven M. Shank , Mark Levy , Rajendran Krishnasamy , John J. Ellis-Monaghan , Anthony K. Stamper
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/763 ; H01L29/06 ; H01L29/423
Abstract:
Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A shallow trench isolation region is formed in a semiconductor substrate. A trench is formed in the shallow trench isolation region, and a body region is formed in the trench of the shallow trench isolation region. The body region is comprised of a polycrystalline semiconductor material.
Public/Granted literature
- US20210376159A1 FIELD-EFFECT TRANSISTORS WITH A POLYCRYSTALLINE BODY IN A SHALLOW TRENCH ISOLATION REGION Public/Granted day:2021-12-02
Information query
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