Invention Grant
- Patent Title: Semiconductor circuit and semiconductor system
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Application No.: US17016547Application Date: 2020-09-10
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Publication No.: US11437804B2Publication Date: 2022-09-06
- Inventor: Koichi Notoya , Hitoshi Imai
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo; JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Allen & Overy LLP
- Priority: JPJP2019-166273 20190912
- Main IPC: H02H1/00
- IPC: H02H1/00 ; H02H9/04 ; G01R19/165

Abstract:
A semiconductor circuit has a primary circuit that causes the light emitting element to emit light in accordance with a current flowing through a control target, and that causes the light emitting element to emit light brighter when an overcurrent flows through the control target; and a secondary circuit that is electrically insulated from the primary circuit, outputs a voltage according to a light emission amount of the light emitting element, and outputs an overcurrent detection signal indicating the brighter light emission in the light emitting element.
Public/Granted literature
- US20210083467A1 SEMICONDUCTOR CIRCUIT AND SEMICONDUCTOR SYSTEM Public/Granted day:2021-03-18
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