Invention Grant
- Patent Title: Generating high dynamic voltage boost
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Application No.: US17327858Application Date: 2021-05-24
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Publication No.: US11437990B2Publication Date: 2022-09-06
- Inventor: Chan-Hong Chern , Tysh-Bin Liu , Kun-Lung Chen
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H02M3/07 ; H03K17/06 ; H03K19/0944

Abstract:
Devices, systems, and methods are provided for generating a high, dynamic voltage boost. An integrated circuit (IC) includes a driving circuit having a first stage and a second stage. The driving circuit is configured to provide an overdrive voltage. The IC also includes a charge pump circuit coupled between the first stage and the second stage. The charge pump circuit is configured generate a dynamic voltage greater than the overdrive voltage. The IC also includes a bootstrap circuit coupled to the charge pump circuit, configured to further dynamically boost the overdrive voltage of the driving circuit.
Public/Granted literature
- US20210281259A1 Generating High Dynamic Voltage Boost Public/Granted day:2021-09-09
Information query
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