Invention Grant
- Patent Title: Durable memory device
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Application No.: US17231978Application Date: 2021-04-15
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Publication No.: US11439004B1Publication Date: 2022-09-06
- Inventor: Chin Feng Chang
- Applicant: TEAM GROUP INC.
- Applicant Address: TW New Taipei
- Assignee: TEAM GROUP INC.
- Current Assignee: TEAM GROUP INC.
- Current Assignee Address: TW New Taipei
- Agency: Maschoff Brennan
- Priority: TW110105510 20210218
- Main IPC: H05K1/02
- IPC: H05K1/02 ; H05K1/11 ; H02H9/04 ; H05K1/18

Abstract:
Disclosed is a durable memory device comprising: a multilayer PCB having a plurality of circuit layers and a plurality of circuit layers insulating layers alternately arranged with each other, ach circuit layer being provided with a via through which the plurality of circuit layers are electrically connected, and the circuit layers has at least one ground layer; a memory member; a connection interface for connecting to a corresponding connecting portion of a computing device; and an anti-sulfuration-and-anti-high-voltage passive component which is disposed at the multilayer PCB and electrically connected to the connection interface and the memory member. By combining the anti-sulfuration-and-anti-high-voltage passive component and multilayer PCB, the durable memory device of the present invention is durable for the outdoor use.
Public/Granted literature
- US20220264740A1 DURABLE MEMORY DEVICE Public/Granted day:2022-08-18
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