Invention Grant
- Patent Title: Sputtering target, oxide semiconductor thin film, and method for producing these
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Application No.: US16211211Application Date: 2018-12-05
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Publication No.: US11443943B2Publication Date: 2022-09-13
- Inventor: Kazuaki Ebata , Nozomi Tajima
- Applicant: Idemitsu Kosan Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2012-250303 20121114
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C04B35/453 ; C23C14/08 ; C23C14/34 ; C23C14/35 ; H01L29/786 ; C04B35/01 ; H01L29/66 ; H01L29/22
Abstract:
A sputtering target including an oxide that includes an indium (In) element, a tin (Sn) element, a zinc (Zn) element and an aluminum (Al) element, wherein the oxide includes a homologous structure compound represented by InAlO3(ZnO)m (m is 0.1 to 10) and a bixbyite structure compound represented by In2O3.
Public/Granted literature
- US20190109001A1 SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND METHOD FOR PRODUCING THESE Public/Granted day:2019-04-11
Information query
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