Invention Grant
- Patent Title: Via for semiconductor device connection and methods of forming the same
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Application No.: US16846750Application Date: 2020-04-13
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Publication No.: US11444020B2Publication Date: 2022-09-13
- Inventor: Chen-Hua Yu , An-Jhih Su , Chi-Hsi Wu , Wen-Chih Chiou , Tsang-Jiuh Wu , Der-Chyang Yeh , Ming Shih Yeh
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/768 ; H01L21/033 ; H01L21/311 ; H01L21/3105 ; H01L21/683 ; H01L21/02 ; H01L23/00 ; H01L23/528 ; H01L33/62 ; H01L21/56 ; H01L25/075 ; H01L33/38 ; H01L25/07 ; H01L23/538 ; H01L33/00 ; H01L33/06 ; H01L33/32 ; H01L21/321
Abstract:
A method for forming a via in a semiconductor device and a semiconductor device including the via are disclosed. In an embodiment, the method may include bonding a first terminal and a second terminal of a first substrate to a third terminal and a fourth terminal of a second substrate; separating the first substrate to form a first component device and a second component device; forming a gap fill material over the first component device, the second component device, and the second substrate; forming a conductive via extending from a top surface of the gap fill material to a fifth terminal of the second substrate; and forming a top terminal over a top surface of the first component device, the top terminal connecting the first component device to the fifth terminal of the second substrate through the conductive via.
Public/Granted literature
- US20200243442A1 Via for Semiconductor Device Connection and Methods of Forming the Same Public/Granted day:2020-07-30
Information query
IPC分类:
