Invention Grant
- Patent Title: Resist composition and patterning process
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Application No.: US16743177Application Date: 2020-01-15
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Publication No.: US11448962B2Publication Date: 2022-09-20
- Inventor: Takayuki Fujiwara , Kenichi Oikawa , Masaki Ohashi , Tomohiro Kobayashi
- Applicant: Shin-Etsu Chemical Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: WHDA, LLP
- Priority: JPJP2019-018638 20190205
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/38 ; C07C381/12 ; G03F7/038 ; G03F7/32 ; G03F7/20
Abstract:
A resist composition comprising a sulfonium salt having formula (1) as PAG, a base polymer, and an organic solvent, when processed by lithography, has light transmittance, acid diffusion suppressing effect, and excellent lithography performance factors such as DOF, LWR and MEF. A lithography process for forming a resist pattern from the composition is also provided.
Public/Granted literature
- US20200249571A1 RESIST COMPOSITION AND PATTERNING PROCESS Public/Granted day:2020-08-06
Information query
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