Invention Grant
- Patent Title: Semiconductor apparatus and manufacturing method
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Application No.: US17323346Application Date: 2021-05-18
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Publication No.: US11450658B2Publication Date: 2022-09-20
- Inventor: Tasuku Kaneda , Hideshi Kuwabara
- Applicant: Canon Kabushiki Kaisha
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Venable LLP
- Priority: JPJP2020-087606 20200519
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L27/092 ; H01L21/265 ; H01L21/8238

Abstract:
A semiconductor apparatus comprises a first semiconductor region including a first surface and a second surface, in which a semiconductor of a first conductivity type is arranged, a second semiconductor region of the first conductivity type, which is arranged between the first surface and the second surface, a third semiconductor region of a second conductivity type, which is arranged in a region between the second semiconductor region and the second surface and on a side portion of the second semiconductor region, a fourth semiconductor region of the first conductivity type, which is arranged between the first surface and the second surface; and a fifth semiconductor region of the second conductivity type, which is arranged in a region between the fourth semiconductor region and the second surface and on a side portion of the fourth semiconductor region.
Public/Granted literature
- US20210366900A1 SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD Public/Granted day:2021-11-25
Information query
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