Invention Grant
- Patent Title: Semiconductor device having nanosheet transistor and methods of fabrication thereof
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Application No.: US17105108Application Date: 2020-11-25
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Publication No.: US11450664B2Publication Date: 2022-09-20
- Inventor: Mao-Lin Huang , Lung-Kun Chu , Chung-Wei Hsu , Jia-Ni Yu , Kuo-Cheng Chiang , Kuan-Lun Cheng , Chih-Hao Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: NZ Carr Law Office PLLC
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/06 ; H01L29/423 ; H01L29/78 ; H01L29/786 ; H01L21/02 ; H01L21/8238 ; H01L29/66

Abstract:
A semiconductor device structure is provided. The device includes first semiconductor layers and second semiconductor layers disposed below and aligned with the first semiconductor layers. Each first semiconductor layer is surrounded by a first and fourth intermixed layers. The first intermixed layer is disposed between the first semiconductor layer and the fourth intermixed layer and includes a first and second materials. The fourth intermixed layer includes a third and fourth materials. Each second semiconductor layer is surrounded by a second and third intermixed layers. The second intermixed layer is disposed between the second semiconductor layer and the third intermixed layer and includes the first and a fifth material. The third intermixed layer includes the third and a sixth material. The second and fourth material are a dipole material having a first polarity, and the fifth and sixth material are a dipole material having a second polarity opposite the first polarity.
Public/Granted literature
- US20220165731A1 SEMICONDUCTOR DEVICE HAVING NANOSHEET TRANSISTOR AND METHODS OF FABRICATION THEREOF Public/Granted day:2022-05-26
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