Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17154775Application Date: 2021-01-21
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Publication No.: US11450731B2Publication Date: 2022-09-20
- Inventor: Chiemi Hashimoto , Kosuke Yayama , Hidekazu Tawara
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2020-024173 20200217
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L49/02 ; H03B5/24 ; H01F7/06 ; H01L23/522

Abstract:
A resistance element includes a conductor, the conductor having a repeating pattern of: a first conductive layer formed on a first interlayer insulating layer on a semiconductor substrate; a second conductive layer formed on a second interlayer insulating layer different from the first interlayer insulating layer; and an interlayer conductive layer connecting the first conductive layer and the second conductive layer, and the second conductive layer has a resistance-value fluctuation characteristic opposite to a resistance-value fluctuation characteristic of the first conductive layer after a heat treatment.
Public/Granted literature
- US20210257443A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-08-19
Information query
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